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MRF5S21150HSR3 - RF Power Field Effect Transistors

Download the MRF5S21150HSR3 datasheet PDF. This datasheet also covers the MRF5S21150HR3 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Description

22 μF, 35 V Tantalum Capacitor 6.8 pF 100B Chip Capacitors 1.8 pF 100B Chip Capacitors 220 nF Chip Capacitors (1812) 10 μF, 35 V Tantalum Capacitors 0.3 pF Chip Capacitor 470 μF, 63 V Electrolytic Capacitor, Radial 10 kW, 1/4 W Chip Resistors Part Number TAJE226M035R 100B6R8CW 100B1R8BW 1812Y224KXA

Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • Lower Thermal Resistance Package.
  • Low Gold Plating Thickness on Leads, 40μ″ Nominal.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF5S21150HR3 MRF5S21150HSR3 2110 - 2170 MHz, 33 W AVG. , 28 V 2 x W - CDMA.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF5S21150HR3_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF5S21150R3 RF POWER FIELD EFFECT TRANSISTORS Motorola Inc
MRF5S21150SR3 RF POWER FIELD EFFECT TRANSISTORS Motorola Inc
MRF5S21130 The RF MOSFET Line RF Power Field Effect Transistor Motorola
MRF5S21130R3 The RF MOSFET Line RF Power Field Effect Transistor Motorola
MRF5S21130S The RF MOSFET Line RF Power Field Effect Transistor Motorola

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF5S21150HR3 RF Power Field Effect Transistors
MRF5S21130HR3 RF Power Field Effect Transistors
MRF5S21130HSR3 RF Power Field Effect Transistors
MRF5S21045 RF Power Field Effect Transistors
MRF5S21045MBR1 RF Power Field Effect Transistors

Full PDF Text Transcription

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www.DataSheet4U.com Freescale Semiconductor Technical Data MRF5S21150H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1300 mA, Pout = 33 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 12.5 dB Efficiency — 25% IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 39 dBc in 3.
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