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MRF5S9080NR1 GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs

MRF5S9080NR1 Description

Freescale Semiconductor Technical Data Document Number: MRF5S9080N Rev.1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode .
4.

MRF5S9080NR1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* 200_C Capable Plastic Package
* RoHS Compliant
* In Ta

MRF5S9080NR1 Applications

* with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. GSM Application
* Typical GSM Performance: VDD = 26 Volts, IDQ = 600 mA, Pout = 80 Watts CW, Full Frequency Band (869 - 894 MHz or 921 - 960 MHz). Power Gain
* 18.5 dB Drain Effici

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Datasheet Details

Part number
MRF5S9080NR1
Manufacturer
Freescale Semiconductor
File Size
776.62 KB
Datasheet
MRF5S9080NR1_FreescaleSemiconductor.pdf
Description
GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs

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GSM GSM EDGE LATERAL N-CHANNEL POWER MOSFETs Freescale Semiconductor
Freescale Semiconductor MRF5S9080NR1-like datasheet