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MRF5S9080NR1 Datasheet GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

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Overview

Freescale Semiconductor Technical Data Document Number: MRF5S9080N Rev.

1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz.

Suitable for TDMA, CDMA, and multicarrier amplifier applications.

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • 200_C Capable Plastic Package.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Operating Junction Temperature Symbol V.

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