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MRF5S9150HSR3 Datasheet SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: Freescale Semiconductor Technical Data Document Number: MRF5S9150H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications. • Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1500 mA, Pout = 33 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 19.7 dB Drain Efficiency — 28.4% ACPR @ 750 kHz Offset — - 46.

Download the MRF5S9150HSR3 datasheet PDF. This datasheet also includes the MRF5S9150HR3 variant, as both parts are published together in a single manufacturer document.

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Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters www. DataSheet4U. com.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • Lower Thermal Resistance Package.
  • Low Gold Plating Thickness on Leads, 40μ″ Nominal.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF5S9150HR3 MRF5S9150HSR3 880 MHz, 33 W AVG. , 28 V SI.

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More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

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