MRF5S9150HSR3 Datasheet | Freescale Semiconductor

Freescale Semiconductor Technical Data Document Number: MRF5S9150H Rev. 1, 5/2006 RF Power Field Effect Transistors - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications. - Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1500 m A, Pout = 33 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR = 9.8 d B @ 0.01% Probability on CCDF. Power Gain - 19.7 d B Drain Efficiency - 28.4% ACPR @ 750 k Hz Offset - - 46.8 d Bc in 30 k Hz Bandwidth - Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 150 Watts CW Output Power Features - Characterized with Series Equivalent Large - Signal Impedance Parameters .. - Internally Matched for Ease of Use - Qualified Up to a Maximum of 32 VDD Operation - Integrated ESD Protection - Lower Thermal Resistance Package - Low Gold Plating Thickness on Leads, 40μ″ Nominal. - Ro HS pliant - In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF5S9150HR3 MRF5S9150HSR3 880 MHz, 33 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1...