• Part: MRF6S18060MR1
  • Description: RF Power Field Effect Transistors
  • Category: Transistor
  • Manufacturer: Freescale Semiconductor
  • Size: 727.36 KB
MRF6S18060MR1 Datasheet (PDF) Download
Freescale Semiconductor
MRF6S18060MR1

Key Features

  • Typical GSM Performance: VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 Watts CW, Full Frequency Band (1805 - 1880 MHz or 1930 - 1990 MHz) Power Gain — 15 dB Drain Efficiency - 50% GSM EDGE Application
  • Typical GSM EDGE Performance: VDD = 26 Volts, IDQ = 450 mA, Pout = 25 Watts Avg., Full Frequency Band (1805 - 1880 MHz or 1930 - 1990 MHz) Power Gain — 15.5 dB Spectral Regrowth @ 400 kHz Offset = - 62 dBc Spectral Regrowth @ 600 kHz Offset = - 76 dBc EVM — 2% rms