Datasheet Summary
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Freescale Semiconductor Technical Data
Document Number: MRF6S19060N Rev. 3, 5/2006
RF Power Field Effect Transistors
- Channel Enhancement
- Mode Lateral MOSFETs
Designed for N
- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N
- P C S / c e l l u l a r r a d i o a n d W L L applications.
- Typical 2
- Carrier N
- CDMA Performance: VDD = 28 Volts, IDQ = 610 mA, Pout = 12 Watts Avg., Full Frequency Band, IS
- 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability...