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MRF6S19100HSR3 - RF Power Field Effect Transistors

Download the MRF6S19100HSR3 datasheet PDF. This datasheet also covers the MRF6S19100HR3 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

Part Number 2743019447 27271SL 100B150CP500X 100B5R6JP500X T491C105K050AS 100B430CP500X T491X226K035AS T491C106K035AS C1825C14J5RAC MCR50V107M8X11 CRCW120612R0F100 CRCW12062001F100 Manufacturer Fair - Rite Johanson Dielectrics ATC Kemet Kemet ATC Kemet Kemet Kemet Multicomp Vishay Vishay MRF6S19100

Key Features

  • PUT POWER (WATTS) CW 12 V 16 V IDQ = 900 mA f = 1960 MHz 20 V 28 V 24 V VDD = 32 V Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S19100HR3 MRF6S19100HSR3 6 Figure 11. Power Gain versus Output Power IM3 (dBc), ACPR (dBc) VDD = 28 Vdc, IDQ = 900 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 2.
  • Carrier N.
  • CDMA, 2.5 MHz Carrier Spacing, 1.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF6S19100HR3_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF6S19100HR3 RF Power Field Effect Transistors
MRF6S19100NBR1 RF Power Field Effect Transistors
MRF6S19100NR1 RF Power Transistors
MRF6S19120HR3 RF Power Transistors
MRF6S19120HSR3 RF Power Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data Document Number: MRF6S19100H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L www.datasheet4u.com applications. • Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 22 Watts Avg., Full Frequency Band, IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 16.1 dB Drain Efficiency — 28% IM3 @ 2.5 MHz Offset — - 37 dBc @ 1.