MRF6S19100HSR3 Datasheet | Freescale Semiconductor

Freescale Semiconductor Technical Data Document Number: MRF6S19100H Rev. 3, 8/2005 RF Power Field Effect Transistors - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L .. applications. - Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 900 m A, Pout = 22 Watts Avg., Full Frequency Band, IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 d B @ 0.01% Probability on CCDF. Power Gain - 16.1 d B Drain Efficiency - 28% IM3 @ 2.5 MHz Offset - - 37 d Bc @ 1.2288 MHz Channel Bandwidth ACPR @ 885 k Hz Offset - - 51 d Bc @ 30 k Hz Channel Bandwidth - Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power - Characterized with Series Equivalent Large - Signal Impedance Parameters - Internally Input and Output Matched for Ease of Use - Qualified Up to a Maximum of 32 VDD Operation - Integrated ESD Protection - Lower Thermal Resistance Package - Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications - Low Gold Plating Thickness on Leads, 40µ″ Nominal. - Pb - Free and Ro HS pliant - In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF6S19100HR3 MRF6S19100HSR3 1990 MHz, 22 W AVG., 28 V 2 x N - CDMA LATERAL...