MRF6S19100HSR3 Description
Freescale Semiconductor Technical Data Document Number: 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s.
MRF6S19100HSR3 Key Features
- a s s A B f o r P C N - P C S / c e
- a r r a d i o a n d W L L .. applications. • Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 9