MRF6S19100HSR3 - RF Power Field Effect Transistors

This page provides the datasheet information for the MRF6S19100HSR3, a member of the MRF6S19100HR3 RF Power Field Effect Transistors family.

Product Overview

Freescale Semiconductor

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Datasheet Details

Part number	MRF6S19100HSR3
Manufacturer	Freescale Semiconductor
File Size	447.55 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF6S19100HSR3 Datasheet
Additional preview pages of the MRF6S19100HSR3 datasheet.

MRF6S19100HSR3 Product details

Description

Part Number 2743019447 27271SL 100B150CP500X 100B5R6JP500X T491C105K050AS 100B430CP500X T491X226K035AS T491C106K035AS C1825C14J5RAC MCR50V107M8X11 CRCW120612R0F100 CRCW12062001F100 Manufacturer Fair - Rite Johanson Dielectrics ATC Kemet Kemet ATC Kemet Kemet Kemet Multicomp Vishay Vishay MRF6S19100

Features

PUT POWER (WATTS) CW 12 V 16 V IDQ = 900 mA f = 1960 MHz 20 V 28 V 24 V VDD = 32 V Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S19100HR3 MRF6S19100HSR3 6 Figure 11. Power Gain versus Output Power IM3 (dBc), ACPR (dBc) VDD = 28 Vdc, IDQ = 900 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 2.
Carrier N.
CDMA, 2.5 MHz Carrier Spacing, 1.

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Published: Jun 10, 2009 |