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MRF6S19100NBR1 - RF Power Field Effect Transistors

General Description

10 μF, 35 V Tantalum Capacitor 100 nF Chip Capacitor (1206) 5.1 pF 600B Chip Capacitors 9.1 pF 600B Chip Capacitors 10 μF, 50 V Chip Capacitors 1 kΩ, 1/4 W Chip Resistor (1206) 10 kΩ, 1/4 W Chip Resistor (1206) 10 Ω, 1/4 W Chip Resistor (1206) 600B5R1BT250XT 600B9R1BT250XT GRM55DR61H106KA88L ATC ATC

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • N Suffix Indicates Lead - Free Terminations.
  • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF6S19100NR1 RF Power Transistors
MRF6S19100HR3 RF Power Field Effect Transistors
MRF6S19100HSR3 RF Power Field Effect Transistors
MRF6S19120HR3 RF Power Transistors
MRF6S19120HSR3 RF Power Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data Document Number: MRF6S19100N Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L www.datasheet4u.com applications. • Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 950 mA, Pout = 22 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 14.5 dB Drain Efficiency — 25.5% IM3 @ 2.5 MHz Offset — - 37 dBc in 1.