MRF6S19100NBR1 - RF Power Field Effect Transistors

Product Overview

Freescale Semiconductor

Datasheet Details

Part number	MRF6S19100NBR1
Manufacturer	Freescale Semiconductor
File Size	661.67 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF6S19100NBR1 Datasheet
Additional preview pages of the MRF6S19100NBR1 datasheet.

MRF6S19100NBR1 Product details

Description

10 μF, 35 V Tantalum Capacitor 100 nF Chip Capacitor (1206) 5.1 pF 600B Chip Capacitors 9.1 pF 600B Chip Capacitors 10 μF, 50 V Chip Capacitors 1 kΩ, 1/4 W Chip Resistor (1206) 10 kΩ, 1/4 W Chip Resistor (1206) 10 Ω, 1/4 W Chip Resistor (1206) 600B5R1BT250XT 600B9R1BT250XT GRM55DR61H106KA88L ATC ATC

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
N Suffix Indicates Lead - Free Terminations.
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

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Published: Jun 10, 2009 |