MRF6S19100NBR1 Datasheet | Freescale Semiconductor

Freescale Semiconductor Technical Data Document Number: MRF6S19100N Rev. 1, 5/2006 RF Power Field Effect Transistors - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L .. applications. - Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 950 m A, Pout = 22 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 d B @ 0.01% Probability on CCDF. Power Gain - 14.5 d B Drain Efficiency - 25.5% IM3 @ 2.5 MHz Offset - - 37 d Bc in 1.2288 MHz Bandwidth ACPR @ 885 k Hz Offset - - 51 d Bc in 30 k Hz Bandwidth - Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power Features - Characterized with Series Equivalent Large - Signal Impedance Parameters - Internally Matched for Ease of Use - Qualified Up to a Maximum of 32 VDD Operation - Integrated ESD Protection - N Suffix Indicates Lead - Free Terminations - Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications - 200°C Capable Plastic Package - Ro HS pliant - In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF6S19100NR1 MRF6S19100NBR1 1930- 1990 MHz, 22 W AVG., 28 V 2 x...