MRF6S19100HR3 datasheet by Freescale Semiconductor (now NXP Semiconductors).
| Part number | MRF6S19100HR3 |
|---|---|
| Datasheet | MRF6S19100HR3_FreescaleSemiconductor.pdf |
| File Size | 447.55 KB |
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) |
| Description | RF Power Field Effect Transistors |
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Freescale Semiconductor Technical Data Document Number: 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s.
View all Freescale Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MRF6S19100HSR3 | RF Power Field Effect Transistors |
| MRF6S19100NBR1 | RF Power Field Effect Transistors |
| MRF6S19100NR1 | RF Power Transistors |
| MRF6S19120HR3 | RF Power Transistors |
| MRF6S19120HSR3 | RF Power Transistors |
| MRF6S19140HR3 | N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S19140HSR3 | N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S19060NBR1 | RF Power Field Effect Transistors |
| MRF6S19060NR1 | RF Power Field Effect Transistors |
| MRF6S19200HR3 | RF Power Transistors |
