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MRF6S19100HSR3 Datasheet RF Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Download the MRF6S19100HSR3 datasheet PDF. This datasheet also includes the MRF6S19100HR3 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (MRF6S19100HR3_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

Overview

Freescale Semiconductor Technical Data Document Number: MRF6S19100H Rev.

Key Features

  • PUT POWER (WATTS) CW 12 V 16 V IDQ = 900 mA f = 1960 MHz 20 V 28 V 24 V VDD = 32 V Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S19100HR3 MRF6S19100HSR3 6 Figure 11. Power Gain versus Output Power IM3 (dBc), ACPR (dBc) VDD = 28 Vdc, IDQ = 900 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 2.
  • Carrier N.
  • CDMA, 2.5 MHz Carrier Spacing, 1.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

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