MRF6S19100HSR3

MRF6S19100HSR3 is RF Power Field Effect Transistors manufactured by Freescale Semiconductor.

MRF6S19100HSR3 Datasheet

Part number	MRF6S19100HSR3
Download	MRF6S19100HSR3 Datasheet (PDF)
File Size	447.55 KB
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors

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MRF6S19100HSR3 Distributor

MRF6S19100HSR3 Description

Freescale Semiconductor Technical Data Document Number: 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s.

MRF6S19100HSR3 Key Features

a s s A B f o r P C N - P C S / c e
a r r a d i o a n d W L L .. applications. • Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 9

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