MRF6S19100NBR1 Description
Freescale Semiconductor Technical Data Document Number: 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s.
MRF6S19100NBR1 Key Features
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 32 VDD Operation
- Integrated ESD Protection
- N Suffix Indicates Lead
- Free Terminations
- Designed for Lower Memory Effects and Wide Instantaneous Bandwidth