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MRF6S21060NR1 Datasheet RF Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Download the MRF6S21060NR1 datasheet PDF. This datasheet also includes the MRF6S21060NBR1 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (MRF6S21060NBR1_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

Overview

LIFETIME BUY LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz.

Suitable for TDMA, CDMA and multicarrier amplifier applications.

To be used in Class AB for PCN--PCS/cellular radio, WLL and TD--SCDMA applications.

Key Features

  • Characterized with Series Equivalent Large--Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF6S21060NBR1 RF Power Field Effect Transistors
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MRF6S21100HR3 RF Power Field Effect Transistors
MRF6S21100HSR3 RF Power Field Effect Transistors
MRF6S21100NBR1 RF Power Field Effect Transistors
MRF6S21100NR1 RF Power Field Effect Transistors
MRF6S20010GNR1 RF Power Field Effect Transistors
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MRF6S23100Hxx RF Power Dield Effect Transistors