MRF6S23140HSR3, MRF6S23140HR3 Datasheet - Freescale Semiconductor

MRF6S23140HSR3 RF Power FET

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C WLL applications. Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1300 mA, Pout = 28 Watts Avg., Ful.

MRF6S23140HSR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* Lower Thermal Resistance Package

* Designed for Lower Memory E

MRF6S23140HR3_FreescaleSemiconductor.pdf

MRF6S23140HSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF6S23140HSR3, MRF6S23140HR3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MRF6S23140HSR3, MRF6S23140HR3

Manufacturer:

Freescale Semiconductor

File Size:

460.27 KB

Description:

Rf power fet.

Note:

This datasheet PDF includes multiple part numbers: MRF6S23140HSR3, MRF6S23140HR3.
Please refer to the document for exact specifications by model.

MRF6S23140HSR3 Distributor

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MRF6S23140HSR3 MRF6S23140HR3 Power FET Freescale Semiconductor