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MRF6S23100Hxx Datasheet RF Power Dield Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview

Freescale Semiconductor Technical Data Document Number: MRF6S23100H Rev.

0, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for 802.

Key Features

  • ndwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) RF Device Data Freescale Semiconductor.