Datasheet Summary
Freescale Semiconductor Technical Data
Document Number: MRF6S23100H Rev. 0, 8/2005
RF Power Field Effect Transistors
- Channel Enhancement
- Mode Lateral MOSFETs
Designed for 802.16 WiBro and dual mode applications with frequencies from 2300 to 2400 MHz. Suitable for Class AB feedforward and predistortion systems.
- Typical 2
- Carrier W
- CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 20 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain
- 15.4 dB Drain Efficiency
- 23.5% IM3 @ 10 MHz Offset
- - 37 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset
- - 40.5 dBc @ 3.84 MHz Channel Bandwidth
- Capable of...