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MRF6S23140HSR3 - RF Power FET

Download the MRF6S23140HSR3 datasheet PDF. This datasheet also covers the MRF6S23140HR3 variant, as both devices belong to the same rf power fet family and are provided as variant models within a single manufacturer datasheet.

Description

Ferrite Beads, Short 5.6 pF 100B Chip Capacitors 0.01 μF, 100 V Chip Capacitors 2.2 μF, 50 V Chip Capacitors 22 μF, 25 V Tantalum Chip Capacitors 47 μF, 16 V Tantalum Chip Capacitors 10 μF, 50 V Chip Capacitors (2220) 330 μF, 63 V Electrolytic Capacitors 10 Ω, 1/8 W Chip Resistor (1206) Part Number

Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • Lower Thermal Resistance Package.
  • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF6S23140HR3_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
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MRF6S21140HSR3 RF Power FET NXP
MRF6S9060MBR1 RF Power Field Effect Transistors NXP
MRF6S9060MR1 RF Power Field Effect Transistors NXP
MRF6S9060NBR1 RF Power Field Effect Transistors NXP

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF6S23140HR3 RF Power FET
MRF6S23100Hxx RF Power Dield Effect Transistors
MRF6S20010GNR1 RF Power Field Effect Transistors
MRF6S20010NR1 RF Power Field Effect Transistors
MRF6S21050LR3 RF Power Field Effect Transistors

Full PDF Text Transcription

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C WLL applications. • Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1300 mA, Pout = 28 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 15.2 dB Drain Efficiency — 25% IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 40 dBc in 3.
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