Datasheet Summary
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Freescale Semiconductor Technical Data
Document Number: MRF6S24140H Rev. 0, 3/2007
RF Power Field Effect Transistors
- Channel Enhancement
- Mode Lateral MOSFETs
Designed primarily for large
- signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.
- Typical CW Performance at 2450 MHz, VDD = 28 Volts, IDQ = 1200 mA, Pout = 140 Watts Power Gain
- 13.2 dB Drain Efficiency
- 45%
- Capable of Handling 10:1 VSWR, @ 28 Vdc, 2390 MHz, 140 Watts CW Output Power Features
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of...