Datasheet4U Logo Datasheet4U.com

MRF6S27015NR1 - RF Power Field Effect Transistors

Description

100 nF Chip Capacitor 4.7 pF Chip Capacitor 9.1 pF Chip Capacitor 8.2 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 10 μF, 35 V Tantalum Chip Capacitor 1 KΩ, 1/4 W Chip Resistor 10 KΩ,1/4 W Chip Resistor 10 Ω, 1/4 W Chip Resistor Part Number CDR33BX104AKWS 600B4R7BT250XT 600B9R1BT250XT 600B8R2BT250

Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • 200°C Capable Plastic Package.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. MRF6S27015NR1 MRF6S27015GNR1 2300- 2700 MHz, 3 W AVG. , 28 V SINGLE W - CDMA.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MRF6S21140HR3 RF Power FET NXP
MRF6S21140HSR3 RF Power FET NXP
MRF6S9060MBR1 RF Power Field Effect Transistors NXP
MRF6S9060MR1 RF Power Field Effect Transistors NXP
MRF6S9060NBR1 RF Power Field Effect Transistors NXP

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF6S27015GNR1 RF Power Field Effect Transistors
MRF6S27050HR3 RF Power Field Effect Transistors
MRF6S27050HSR3 RF Power Field Effect Transistors
MRF6S27050HSR3 RF Power Field Effect Transistors
MRF6S27085HR3 N-Channel Enhancement-Mode Lateral MOSFETs

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S27015N Rev. 0, 8/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2000 to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications. • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 160 mA, Pout = 3 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 14 dB Drain Efficiency — 22% ACPR @ 5 MHz Offset — - 45 dBc in 3.
Published: |