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MRF6S27015GNR1 Datasheet RF Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Download the MRF6S27015GNR1 datasheet PDF. This datasheet also includes the MRF6S27015NR1 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (MRF6S27015NR1_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

Overview

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S27015N Rev.

0, 8/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2000 to 2700 MHz.

Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • 200°C Capable Plastic Package.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. MRF6S27015NR1 MRF6S27015GNR1 2300- 2700 MHz, 3 W AVG. , 28 V SINGLE W - CDMA.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
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