MRF6S27050HSR3 Datasheet PDF (RF Power Field Effect Transistors) | Download Freescale Semiconductor MRF6S27050HSR3

MRF6S27050HSR3 - RF Power Field Effect Transistors

This page provides the datasheet information for the MRF6S27050HSR3, a member of the MRF6S27050HR3 RF Power Field Effect Transistors family.

Description

Part Number 2508051107Y0 2743019447 ATC100B4R3BT500XT ATC100B3R6BT500XT C1825C225J5RAC C1825C103J1RAC T491D226K025AT T491D476K016AT T491D106K050AT GRM32RR71H105KA01B EMVY630GTR331MMH0S EMVK500ADA470MHA0G CRCW12062R7FKEA Manufacturer Fair - Rite Fair - Rite ATC ATC Kemet Kemet Kemet Kemet Kemet Murat

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

Datasheet Details

Part number	MRF6S27050HSR3
Manufacturer	Freescale Semiconductor
File Size	493.58 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF6S27050HSR3 Datasheet
Additional preview pages of the MRF6S27050HSR3 datasheet.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 1, 12/2008 www.DataSheet4U.com RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2500 to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications. • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 7 Watts Avg., f = 2615 MHz, Channel Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 16 dB Drain Efficiency — 22.5% ACPR @ 5 MHz Offset — - 42.5 dBc @ 3.

Published: Mar 20, 2010 |