MRF6S27050HR3 Datasheet RF Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

MRF6S27050HR3 rf power field effect transistors by Freescale Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MRF6S27050HR3
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	493.58 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF6S27050HR3 Datasheet

Overview

Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev.

1, 12/2008 www.DataSheet4U.com RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2500 to 2700 MHz.

Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.

Key Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth.

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