MRF6S27015NR1 Datasheet PDF (RF Power Field Effect Transistors) | Download Freescale Semiconductor MRF6S27015NR1

MRF6S27015NR1 - RF Power Field Effect Transistors

Description

100 nF Chip Capacitor 4.7 pF Chip Capacitor 9.1 pF Chip Capacitor 8.2 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 10 μF, 35 V Tantalum Chip Capacitor 1 KΩ, 1/4 W Chip Resistor 10 KΩ,1/4 W Chip Resistor 10 Ω, 1/4 W Chip Resistor Part Number CDR33BX104AKWS 600B4R7BT250XT 600B9R1BT250XT 600B8R2BT250

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
200°C Capable Plastic Package.
RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. MRF6S27015NR1 MRF6S27015GNR1 2300- 2700 MHz, 3 W AVG. , 28 V SINGLE W - CDMA.

Datasheet Details

Part number	MRF6S27015NR1
Manufacturer	Freescale Semiconductor
File Size	623.87 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF6S27015NR1 Datasheet
Additional preview pages of the MRF6S27015NR1 datasheet.

📁 Similar Datasheet

MRF6S21140HR3 - RF Power FET (NXP)

MRF6S21140HSR3 - RF Power FET (NXP)

MRF6S9060MBR1 - RF Power Field Effect Transistors (NXP)

MRF6S9060MR1 - RF Power Field Effect Transistors (NXP)

MRF6S9060NBR1 - RF Power Field Effect Transistors (NXP)

MRF6S9060NR1 - RF Power Field Effect Transistors (NXP)

MRF604 - HIGH FREQUENCY TRANSISTOR (Motorola)

MRF604 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)

MRF607 - HIGH FREQUENCY TRANSISTOR (Motorola)

MRF607 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Advanced Power Technology)

Full PDF Text Transcription

Click to expand full text

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S27015N Rev. 0, 8/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2000 to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications. • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 160 mA, Pout = 3 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 14 dB Drain Efficiency — 22% ACPR @ 5 MHz Offset — - 45 dBc in 3.

Published: Feb 15, 2007 |