MRF6S27015NR1 Datasheet RF Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

MRF6S27015NR1 rf power field effect transistors by Freescale Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MRF6S27015NR1
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	623.87 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF6S27015NR1 Datasheet

Overview

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S27015N Rev.

0, 8/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2000 to 2700 MHz.

Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.

Key Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
200°C Capable Plastic Package.
RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. MRF6S27015NR1 MRF6S27015GNR1 2300- 2700 MHz, 3 W AVG. , 28 V SINGLE W - CDMA.

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