Datasheet Summary
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Freescale Semiconductor Technical Data
Document Number: MRF6S9125 Rev. 1, 7/2005
RF Power Field Effect Transistors
- Channel Enhancement
- Mode Lateral MOSFETs
Designed for broadband mercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large
- signal, mon
- source amplifier applications in 28 volt base station equipment. N
- CDMA Application
- Typical Single
- Carrier N
- CDMA Performance: VDD = 28 Volts, IDQ = 950 mA, Pout = 27 Watt Avg., Full Frequency Band (865
- 895 MHz), IS
- 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288...