MRF7S21150HSR3 Description
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications.
MRF7S21150HSR3 Key Features
- 100% PAR Tested for Guaranteed Output Power Capability
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Internally Matched for Ease of Use
- Integrated ESD Protection
- Greater Negative Gate
- Source Voltage Range for Improved Class C
- Designed for Digital Predistortion Error Correction Systems
- RoHS pliant
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel