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MRF7S21170HR3 Datasheet, Freescale Semiconductor

MRF7S21170HR3 transistors equivalent, rf power field effect transistors.

MRF7S21170HR3 Avg. rating / M : 1.0 rating-11

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MRF7S21170HR3 Datasheet

Features and benefits


* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large--Signal Impedance Parameters
* Internally Matched for E.

Application

with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class A.

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MRF7S21170HR3 Page 1 MRF7S21170HR3 Page 2 MRF7S21170HR3 Page 3

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