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Freescale Semiconductor Electronic Components Datasheet

MRF8P23160WHR3 Datasheet

RF Power Field Effect Transistors

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MRF8P23160WHR3 pdf
Freescale Semiconductor
Technical Data
Document Number: MRF8P23160WH
Rev. 0, 12/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for base station applications with wide instantaneous bandwidth
requirements covering frequencies from 2300 to 2400 MHz.
CITDylQippAipci=anlg6D,0oC0hhmearAntyn, eVSlGinBSgaBlne=d--wC1i.ad2rtrhVied=rcW3, .P8--oC4uDMt =MH3Az0,PIWneprafutottsrmSAiagvnngca.,el I:PQVADRMDa==g9n2.i9t8uddVBeolt@s,
0.01% Probability on CCDF.
Frequency
2300 MHz
2350 MHz
2400 MHz
Gps
(dB)
13.9
14.1
13.8
ηD Output PAR ACPR
(%)
(dB)
(dBc)
37.1 7.9 --31.0
38.3 7.7 --32.2
38.3 7.4 --33.1
MRF8P23160WHR3
MRF8P23160WHSR3
2300--2400 MHz, 30 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
Capable of Handling 10:1 VSWR, @ 30 Vdc, 2350 MHz, 144 Watts CW (1)
Output Power (3 dB Input Overdrive from Rated Pout)
Typical Pout @ 3 dB Compression Point 190 Watts (2)
Features
Designed for Wide Instantaneous Bandwidth Applications
Designed for Wideband Applications that Require 100 MHz Signal Bandwidth
Production Tested in a Symmetrical Doherty Configuration
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Large--Signal Load--Pull Parameters and Common Source
S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 14.
NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 14.
CASE 465M--01, STYLE 1
NI--780--4
MRF8P23160WHR3
CASE 465H--02, STYLE 1
NI--780S--4
MRF8P23160WHSR3
RFinA/VGSA 3
RFinB/VGSB 4
1 RFoutA/VDSA
2 RFoutB/VDSB
(Top View)
Table 1. Maximum Ratings
Figure 1. Pin Connections
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (3,4)
CW Operation @ TC = 25°C
Derate above 25°C
Symbol
VDSS
VGS
VDD
Tstg
TC
TJ
CW
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
125
225
129
0.48
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
3. Continuous use at maximum temperature will affect MTTF.
4. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2011. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF8P23160WHR3 MRF8P23160WHSR3
1


Freescale Semiconductor Electronic Components Datasheet

MRF8P23160WHR3 Datasheet

RF Power Field Effect Transistors

No Preview Available !

MRF8P23160WHR3 pdf
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 30 W CW, 28 Vdc, IDQA = 600 mA, VGGB = 2.4 Vdc, 2350 MHz
Case Temperature 101°C, 130 W CW(3), 28 Vdc, IDQA = 600 mA, VGGB = 2.4 Vdc, 2350 MHz
Table 3. ESD Protection Characteristics
Symbol
RθJC
Value (1,2)
0.69
0.43
Unit
°C/W
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
10 μAdc
IDSS
5 μAdc
IGSS
1 μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 252 μAdc)
VGS(th)
1.2
1.9
2.7 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDA = 600 mAdc)
VGSA(Q)
2.8
— Vdc
Fixture Gate Quiescent Voltage (4,5)
VGGA(Q)
4.1
5.5
7.1 Vdc
(VDD = 28 Vdc, IDA = 600 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 3.0 Adc)
VDS(on)
0.1
0.24
0.3 Vdc
Functional Tests (6,7,8) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 600 mA, VGSB = 1.2 Vdc, Pout =
30 W Avg., f = 2320 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
ACPR measured on 3.84 MHz Channel Bandwidth @ ±5 MHz Offsett.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Gps
ηD
PAR
12.0
32.0
7.2
14.1
36.5
7.8
15.0
dB
%
dB
Adjacent Channel Power Ratio
ACPR
--32.2
--28.0
dBc
Typical Broadband Performance (6,8) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 600 mA, VGSB = 1.2 Vdc,
Pout = 30 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
Output PAR
ACPR
(%)
(dB)
(dBc)
2300 MHz
13.9 37.1
7.9 --31.0
2350 MHz
14.1 38.3
7.7 --32.2
2400 MHz
13.8 38.3
7.4 --33.1
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4. Each side of device measured separately.
5. VGG = 2.0 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistor divider network on the board. Refer to Test Fixture
Layout.
6. VDDA and VDDB must be tied together and powered by a single DC power supply.
7. Part internally matched both on input and output.
8. Measurement made with device in a Symmetrical Doherty configuration
(continued)
MRF8P23160WHR3 MRF8P23160WHSR3
2
RF Device Data
Freescale Semiconductor, Inc.


Part Number MRF8P23160WHR3
Description RF Power Field Effect Transistors
Maker Freescale Semiconductor
Total Page 13 Pages
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