Datasheet Details
| Part number | MRF8P23160WHSR3 |
|---|---|
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) |
| File Size | 530.30 KB |
| Description | RF Power Field Effect Transistors |
| Datasheet | MRF8P23160WHSR3 MRF8P23160WHR3 Datasheet (PDF) |
|
|
Overview: Freescale Semiconductor Technical Data Document Number: MRF8P23160WH Rev. 0, 12/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for base station applications with wide instantaneous bandwidth requirements covering frequencies from 2300 to 2400 MHz. • CITDylQippAipci=anlg6D,0oC0hhmearAntyn, eVSlGinBSgaBlne=d--wC1i.ad2rtrhVied=rcW3, .P8--oC4uDMt =MH3Az0,PIWneprafutottsrmSAiagvnngca.,el I:PQVADRMDa==g9n2.i9t8uddVBeolt@s, 0.01% Probability on CCDF. Frequency 2300 MHz 2350 MHz 2400 MHz Gps (dB) 13.9 14.1 13.8 ηD Output PAR ACPR (%) (dB) (dBc) 37.1 7.9 --31.0 38.3 7.7 --32.2 38.3 7.4 --33.1 MRF8P23160WHR3 MRF8P23160WHSR3 2300--2400 MHz, 30 W AVG.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | MRF8P23160WHSR3 |
|---|---|
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) |
| File Size | 530.30 KB |
| Description | RF Power Field Effect Transistors |
| Datasheet | MRF8P23160WHSR3 MRF8P23160WHR3 Datasheet (PDF) |
|
|
|
| Part Number | Description |
|---|---|
| MRF8P23160WHR3 | RF Power Field Effect Transistors |
| MRF8P23080HR3 | RF Power Field Effect Transistors |
| MRF8P23080HSR3 | RF Power Field Effect Transistors |
| MRF8P20160HSR3 | RF Power Field Effect Transistor |
| MRF8P26080HR3 | RF Power Field Effect Transistors |
| MRF8P26080HSR3 | RF Power Field Effect Transistors |
| MRF8P9300HR6 | RF Power Field Effect Transistors |
| MRF8P9300HSR6 | RF Power Field Effect Transistors |
| MRF8HP21130HR3 | RF Power Field Effect Transistors |
| MRF8HP21130HSR3 | RF Power Field Effect Transistors |