MRF8P23160WHSR3 Key Features
- Designed for Wide Instantaneous Bandwidth
- Part: MRF8P23160WHSR3
- Manufacturer: Freescale Semiconductor
- Size: 530.30 KB
Related Freescale Semiconductor Datasheets
| Part Number | Description |
|---|---|
| MRF8P23160WHR3 | RF Power Field Effect Transistors |
| MRF8P23080HR3 | RF Power Field Effect Transistors |
| MRF8P23080HSR3 | RF Power Field Effect Transistors |
| MRF8P20160HSR3 | RF Power Field Effect Transistor |
| MRF8P26080HR3 | RF Power Field Effect Transistors |
MRF8P23160WHSR3 Description
Freescale Semiconductor Technical Data Document Number: 0, 12/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for base station applications with wide instantaneous bandwidth requirements covering frequencies from 2300 to 2400 MHz. CITDylQippAipci=anlg6D,0oC0hhmearAntyn, eVSlGinBSgaBlne=d--wC1i.ad2rtrhVied=rcW3, .P8--oC4uDMt =MH3Az0,PIWneprafutottsrmSAiagvnngca.,el...