MRF9200LSR3 Datasheet | Freescale Semiconductor

.. Freescale Semiconductor Technical Data MRF9200L Rev. 1, 12/2004 RF Power Field Effect Transistors N- Channel Enhancement- Mode Lateral MOSFETs Designed for broadband mercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, mon- source amplifier applications in 26 volt base station equipment. - Typical Single- Carrier N- CDMA Performance @ 880 MHz: VDD = 26 Volts, IDQ = 2400 mA, Pout = 40 Watts Avg., IS- 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. Peak/ Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF. Power Gain - 17.5 dB...