MRF9200LR3 Overview
Freescale Semiconductor Technical Data MRF9200L Rev. 1, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband mercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large−signal, mon−source amplifier applications in 26 volt base station equipment.