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Freescale Semiconductor Technical Data
MRF9200L Rev. 1, 12/2004
RF Power Field Effect Transistors
N−Channel Enhancement−Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large−signal, common−source amplifier applications in 26 volt base station equipment. • Typical Single−Carrier N−CDMA Performance @ 880 MHz: VDD = 26 Volts, IDQ = 2400 mA, Pout = 40 Watts Avg., IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. Peak/ Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 17.5 dB Drain Efficiency — 25% ACPR @ 750 kHz Offset — −46.