MRFG35010
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Freescale Semiconductor Technical Data
MRFG35010 Rev. 6, 12/2004
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or Class A linear base station applications.
- Typical W- CDMA Performance:
- 42 d Bc ACPR, 3.55 GHz, 12 Volts, IDQ = 180 m A, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 d B P/A @ 0.01% Probability) Output Power
- 1 Watt Power Gain
- 10 d B Efficiency
- 30%
- 10 Watts P1d B @ 3.55 GHz
- Excellent Phase Linearity and Group Delay Characteristics
- High Gain, High Efficiency and High Linearity
3.5 GHz, 10 W, 12 V POWER FET Ga As PHEMT
CASE 360D- 02, STYLE 1 NI- 360HF
Table 1. Maximum Ratings
Rating Drain- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Gate- Source Voltage RF Input Power Storage Temperature Range Channel Temperature(1) Symbol VDSS PD VGS Pin Tstg Tch TC Value 15 28.3 0.19
- 5 33
- 65 to...
