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Freescale Semiconductor Technical Data
Document Number: MWE6IC9080N www.DataSheet4U.com Rev. 0, 4/2010
RF LDMOS Wideband Integrated Power Amplifiers
The MWE6IC9080N wideband integrated circuit is designed with on--chip matching that makes it usable from 865 to 960 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations. • Typical GSM Performance: VDD = 28 Volts, IDQ1 = 230 mA, IDQ2 = 630 mA, Pout = 80 Watts CW
Frequency 920 MHz 940 MHz 960 MHz Gps (dB) 29.0 28.8 28.5 PAE (%) 49.7 51.6 52.