MWE6IC9100GNR1
MWE6IC9100GNR1 is RF LDMOS Wideband Integrated Power Amplifiers manufactured by Freescale Semiconductor.
ARCHIVE INFORMATION ARCHIVE INFORMATION
Freescale Semiconductor Technical Data
RF LDMOS Wideband Integrated Power Amplifiers
The MWE6IC9100N wideband integrated circuit is designed with on--chip matching that makes it usable from 869 to 960 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations.
Final Application
- Typical GSM Performance: VDD = 26 Volts, IDQ1 = 120 mA, IDQ2 = 950 mA, Pout = 100 Watts CW, f = 960 MHz Power Gain
- 33.5 dB Power Added Efficiency
- 54%
GSM EDGE Application
- Typical GSM EDGE Performance:
870PmowAe, rPGouatin=
50 Watts Avg.,
- 35.5 dB
Full
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