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MWE6IC9100GNR1 - RF LDMOS Wideband Integrated Power Amplifiers

Description

Part Number C1, C2 10 pF Chip Capacitors ATC100B100GT500XT C3, C4, C5 3.9 pF Chip Capacitors ATC100B3R9BT500XT C6 0.5 pF Chip Capacitor ATC100B0R5BT500XT C7, C8, C9, C10, C11, C12, C13, C14 33 pF Chip Capacitors ATC100B330JT500XT C15, C16, C17, C18, C19, C20, C21 6.8 μF Chip Capacitor

Features

  • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
  • On--Chip Matching (50 Ohm Input, DC Blocked).
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1).
  • Integrated ESD Protection.
  • 225°C Capable Plastic Package.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Document Number: MWE6IC9100N Rev. 3, 12/2008 MWE6IC910.

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Full PDF Text Transcription

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ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on--chip matching that makes it usable from 869 to 960 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations. Final Application • Typical GSM Performance: VDD = 26 Volts, IDQ1 = 120 mA, IDQ2 = 950 mA, Pout = 100 Watts CW, f = 960 MHz Power Gain — 33.5 dB Power Added Efficiency — 54% GSM EDGE Application • Typical GSM EDGE Performance: 870PmowAe, rPGouatin= 50 Watts Avg., — 35.
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