MWE6IC9100NR1 Overview
ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9100N wideband integrated circuit is designed with on--chip matching that makes it usable from 869 to 960 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations. Final Application Typical GSM Performance:.
MWE6IC9100NR1 Key Features
- Characterized with Series Equivalent Large--Signal Impedance Parameters and mon Source S--Parameters
- On--Chip Matching (50 Ohm Input, DC Blocked)
- Integrated ESD Protection
- 225°C Capable Plastic Package
- RoHS pliant
- In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel