MWE6IC9100NR1
MWE6IC9100NR1 is RF LDMOS Wideband Integrated Power Amplifiers manufactured by Freescale Semiconductor.
- Part of the MWE6IC9100GNR1 comparator family.
- Part of the MWE6IC9100GNR1 comparator family.
ARCHIVE INFORMATION ARCHIVE INFORMATION
Freescale Semiconductor Technical Data
RF LDMOS Wideband Integrated Power Amplifiers
The MWE6IC9100N wideband integrated circuit is designed with on--chip matching that makes it usable from 869 to 960 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations.
Final Application
- Typical GSM Performance: VDD = 26 Volts, IDQ1 = 120 mA, IDQ2 = 950 mA, Pout = 100 Watts CW, f = 960 MHz Power Gain
- 33.5 dB Power Added Efficiency
- 54%
GSM EDGE Application
- Typical GSM EDGE Performance:
870PmowAe, rPGouatin=
50 Watts Avg.,
- 35.5 dB
Full
VFDreDq=ue2n8cVyoBltasn, dID(Q8169=--2936...
