MB85R4001A
Overview
The MB85R4001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R4001A is able to retain data without using a back-up battery, as is needed for SRAM.
- Bit configuration : 524,288 words × 8 bits
- Read/write endurance : 1010 times / byte
- Data retention : 10 years ( + 55 °C), 55 years ( + 35 °C)
- Operating power supply voltage : 3.0 V to 3.6 V
- Low power operation : Operating power supply current 15 mA (Typ) Standby current 50 μA (T
