Datasheet4U Logo Datasheet4U.com

MB85RC256V Datasheet 256K (32K x 8)Bit I2C

Manufacturer: Fujitsu Semiconductor Limited

📥 Download Datasheet

General Description

The MB85RC256V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

Unlike SRAM, the MB85RC256V is able to retain data without using a data backup battery.

The read/write endurance of the nonvolatile memory cells used for the MB85RC256V has improved to be at least 1010 cycles, significantly outperforming other nonvolatile memory products in the number.

Overview

FUJITSU SEMICONDUCTOR DATA SHEET DS501-00017-0v01-E Memory FRAM 256 K (32 K × 8) Bit I2C.

Key Features

  • Bit configuration.
  • Two-wire serial interface.
  • Operating frequency.
  • : 32,768 words × 8 bits : Fully controllable by two ports: serial clock (SCL) and serial data (SDA). : 2.7V to 4.5V 400 kHz (Max) 4.5V to 5.5V 1 MHz (Max) Read/write endurance : 1010 times / byte Data retention : 10 years ( + 70 °C) Operating power supply voltage : 2.7 V to 5.5 V Low-power consumption : Operating power supply current TBD μA (Ty.

More Datasheets from Fujitsu Semiconductor Limited

Part Number Description
MB85RC04V 4K-bit I2C Memory FRAM
MB85RC128 128 K (16 K x 8) Bit I2C
MB85RC16 16 K (2 K x 8) Bit I2C
MB85RC16V 16K (2K x 8) Bit I2C
MB85RC64 64K-Bit I2C Memory FRAM
MB85RC64A 64K-Bit I2C Memory FRAM
MB85RC64TA 64K-Bit I2C Memory FRAM
MB85RC64V 64K-Bit I2C Memory FRAM
MB85R1001A 1 M Bit (128 K x 8)
MB85R1002A 1 M Bit (64 K x 16)