FLL357ME - L-band Medium & High Power GAAS Fets

Name: FLL357ME
SKU: FLL357ME-542262

Fujitsu Microelectronics

📥 Download Datasheet

FLL357ME Datasheet Preview — Preview of FLL357ME PDF

Datasheet Details

Part number	FLL357ME
Manufacturer	Fujitsu Microelectronics
File Size	132.29 KB
Description	L-band Medium & High Power GAAS Fets
Datasheet	FLL357ME_FujitsuMicroelectronics.pdf

FLL357ME Product details

Description

The FLL357ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices.

Features

High Output Power: P1dB=35.5dBm (Typ. ) High Gain: G1dB=11.5dB (Typ. ) High PAE: ηadd=46% (Typ. ) Proven Reliability Hermetically Sealed Package.

📁 FLL357ME Similar Datasheet

FLL351ME - L-band medium & high power gaas FTEs (Fujitsu Media Devices)
FLL100 - Capacitor (FAAM)
FLL107ME - L-BAND MEDIUM & HIGH POWER GAAS FET (Fujitsu)
FLL120MK - L-Band Medium & High Power GaAs FET (Eudyna Devices)
FLL177ME - L-BAND MEDIUM & HIGH POWER GAAS FET (Fujitsu)
FLL200 - The Relationship for Open Circuit Voltage and Residual Capacity (FAAM)
FLL200IB-1 - (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET (Eudyna Devices)
FLL200IB-2 - (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET (Eudyna Devices)

Other Datasheets by Fujitsu Microelectronics

FLL300IL-1 - L-band Medium & High Power GAAS Fets
FLL300IL-2 - (FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets
FLL300IL-3 - (FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets
FLL300IP-4 - L-band Medium & High Power GAAS Fets

Published: Apr 18, 2006 |