FLL357ME datasheet, fets equivalent, Fujitsu Microelectronics

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FLL357ME Features and benefits

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* High Output Power: P1dB=35.5dBm (Typ.) High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Packag.

FLL357ME Application

This device is assembled in hermetic metal/ceramic package. Fujitsu’s stringent Quality Assurance Program assures the h.

FLL357ME Description

The FLL357ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make .

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