FLL357ME Key Features
- High Output Power: P1dB=35.5dBm (Typ.) High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermet
- Part: FLL357ME
- Manufacturer: Fujitsu Semiconductor Limited
- Size: 132.29 KB
Related Fujitsu Semiconductor Limited Datasheets
| Part Number | Description |
|---|---|
| FLL300IL-1 | L-band Medium & High Power GAAS Fets |
| FLL300IL-2 | (FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets |
| FLL300IL-3 | (FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets |
| FLL300IP-4 | L-band Medium & High Power GAAS Fets |
FLL357ME Description
The FLL357ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. This device is assembled in hermetic metal/ceramic package.