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MP86945A Intelli-PhaseTM Solution with Integrated High-Side and Low-Side FETs and Driver DESCRIPTION The MP86945A is a monolithic half-bridge with bu

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CMP3803/CMB3803/CMI3803 General Description The 3803 is N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge fo

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DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Di

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N-Channel MOSFETS DESCRIPTION The OGFD 20N50 is produced using advanced planar stripe DMOS technology. This high density process is especially tailore

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QM3006M3 General Description The QM3006M3 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS

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DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Di

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30V P-Channel MOSFETs PDS3807 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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J/SST174/175/176/177 Series Vishay Siliconix P-Channel JFETs J174 J175 J176 J177 SST174 SST175 SST176 SST177 PRODUCT SUMMARY Part Number J/SST174

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J/SST108 Series Vishay Siliconix N–Channel JFETs J108 J109 J110 PRODUCT SUMMARY Part Number J/SST108 J/SST109 J/SST110 VGS(off) (V) –3 to –10 –2

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www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www

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J/SST108 Series Vishay Siliconix N–Channel JFETs J108 J109 J110 PRODUCT SUMMARY Part Number J/SST108 J/SST109 J/SST110 VGS(off) (V) –3 to –10 –2

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J105/106/107 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number J105 J106 J107 VGS(off) (V) –4.5 to –10 –2 to –6 –0.5 to –4.5 rDS(on) Ma

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J105/106/107 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number J105 J106 J107 VGS(off) (V) –4.5 to –10 –2 to –6 –0.5 to –4.5 rDS(on) Ma

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J105/106/107 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number J105 J106 J107 VGS(off) (V) –4.5 to –10 –2 to –6 –0.5 to –4.5 rDS(on) Ma

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DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Di

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www.DataSheet4U.com TC2181 REV4_20070504 Low Noise and High Dynamic Range Packaged GaAs FETs FEATURES 0.5 dB Typical Noise Figur

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QM6015D P-Ch 60V Fast Switching MOSFETs General Description The QM6015D is the highest performance trench P-ch MOSFETs with extreme high cell density

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100V N-Channel MOSFETs PDD0958A General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology

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CMP100N03/CMB100N03/CMI100N03 N-Ch 30V Fast Switching MOSFETs General Description The100N03 is N-ch MOSFETs with extreme high cell density , which pr

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TPC8046-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPC8046-H Switching Regulator Applications Motor Drive Applications D

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