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MP86945A Intelli-PhaseTM Solution with Integrated High-Side and Low-Side FETs and Driver DESCRIPTION The MP86945A is a monolithic half-bridge with bu

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www.DataSheet4U.com IRF9540, RF1S9540SM Data Sheet January 2002 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode s

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100V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This adv

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CMP100N04/CMB100N04/CMI100N04 N-Ch 40V Fast Switching MOSFETs General Description The100N04 is N-ch MOSFETs with extreme high cell density , which pr

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CMP3803/CMB3803/CMI3803 General Description The 3803 is N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge fo

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N-Channel MOSFETS DESCRIPTION The OGFD 20N50 is produced using advanced planar stripe DMOS technology. This high density process is especially tailore

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MP86945A Intelli-PhaseTM Solution with Integrated High-Side and Low-Side FETs and Driver DESCRIPTION The MP86945A is a monolithic half-bridge with bu

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30V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan

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60V N-Channel MOSFETs PDD6902 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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Preliminary Technical Information Polar3TM HiperFETTM IXFA22N60P3 Power MOSFETs IXFP22N60P3 IXFQ22N60P3 N-Channel Enhancement Mode IXFH22N60P3

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HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt IXFH 9N80Q IXFT 9N80Q VDSS I D25 RDS(on) = 800 V = 9

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650V N-Channel MOSFETs PDF04N65L General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technol

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30V P-Channel MOSFETs PDS3807 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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30V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan

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40V N-Channel MOSFETs PDC4904X General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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Data Sheet RFG50N05L, RFP50N05L January 2002 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs

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100V N-Channel MOSFETs PDD0958A General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology

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RFP45N02L, RF1S45N02L, RF1S45N02LSM May 1997 45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs Description The RFP45N02L, RF1S45N02L, and RF1S

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