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TC2181 Low Noise and High Dynamic Range Packaged GaAs FETs

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Description

www.DataSheet4U.com TC2181 REV4_20070504 Low Noise and High Dynamic Range Packaged GaAs FETs .
The TC2181 is a high performance field effect transistor housed in a ceramic micro-x package with TC1101 PHEMT Chip.

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Datasheet Specifications

Part number
TC2181
Manufacturer
Transcom
File Size
305.68 KB
Datasheet
TC2181_Transcom.pdf
Description
Low Noise and High Dynamic Range Packaged GaAs FETs

Features

* ! ! ! ! ! ! ! ! ! ! 0.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz 18.5 dBm Typical Power at 12 GHz 13 dB Typical Linear Power Gain at 12 GHz Breakdown Voltage : BVDGO ≥ 9V Lg = 0.25 µm, Wg = 160 µm Tight Vp ranges control High RF input power handling capabi

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