TC2181 Datasheet - Transcom

TC2181 Low Noise and High Dynamic Range Packaged GaAs FETs

The TC2181 is a high performance field effect transistor housed in a ceramic micro-x package with TC1101 PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure co.

TC2181 Features

* ! ! ! ! ! ! ! ! ! ! 0.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz 18.5 dBm Typical Power at 12 GHz 13 dB Typical Linear Power Gain at 12 GHz Breakdown Voltage : BVDGO ≥ 9V Lg = 0.25 µm, Wg = 160 µm Tight Vp ranges control High RF input power handling capabi

TC2181_Transcom.pdf