TC2571 PHEMT GaAs Power FETs

Transcom

Description

www.DataSheet4U.com TC2571 REV.2_04/12/2004 1W Low-Cost Packaged PHEMT GaAs Power FETs .
The TC2571 is packaged the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power chip.

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Datasheet Specifications

Part number: TC2571
Manufacturer: Transcom
File Size: 180.05 KB
Datasheet: TC2571_Transcom.pdf
Description: PHEMT GaAs Power FETs

Features

* 1W Typical Output Power at 6 GHz 11dB Typical Power Gain at 6 GHz High Linearity: IP3 = 40 dBm Typical at 6 GHz High Power Added Efficiency: PAE ≥ 43 % for Class A Operation Suitable for High Reliability Applic

Applications

* include high dynamic range power amplifier for commercial applications including Cellular/PCS systems, and military high performance power amplifier. ELECTRICAL SPECIFICATIONS (TA=25℃) Symbol P1dB G1dB IP3 PAE IDSS gm VP BVDGO Rth CONDITIONS Output Power at 1dB Gain Compression Point , f = 6GHz VDS

TC2571 Distributors

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TC2571 PHEMT GaAs Power FETs Transcom

Transcom TC2571-like datasheet