TC2571 Datasheet - Transcom

TC2571 PHEMT GaAs Power FETs

The TC2571 is packaged the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power chip. The cu-based ceramic package that requires a surface-mount package is a low-cost and high performance package. All devices are 100% DC tested to assure consistent quality. Typical applications .

TC2571 Features

* 1W Typical Output Power at 6 GHz 11dB Typical Power Gain at 6 GHz High Linearity: IP3 = 40 dBm Typical at 6 GHz High Power Added Efficiency: PAE ≥ 43 % for Class A Operation Suitable for High Reliability Applic

TC2571 Datasheet (180.05 KB)