TC2281 Datasheet - Transcom

TC2281 Low Noise and High Dynamic Range Packaged GaAs FETs

The TC2281 is a high performance field effect transistor housed in a ceramic micro-x package with TC1201 PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure co.

TC2281 Features

* ! ! ! ! ! ! ! ! ! ! 0.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz 21.5 dBm Typical Power at 12 GHz 12 dB Typical Linear Power Gain at 12 GHz Breakdown Voltage : BVDGO ≥ 9 V Lg = 0.25 µm, Wg = 300 µm Tight Vp ranges control High RF input power handling capab

TC2281_Transcom.pdf