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TC2281 - Low Noise and High Dynamic Range Packaged GaAs FETs

Transcom

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Datasheet Details

Part number	TC2281
Manufacturer	Transcom
File Size	343.70 KB
Description	Low Noise and High Dynamic Range Packaged GaAs FETs
Datasheet	TC2281_Transcom.pdf

TC2281 Product details

Description

The TC2281 is a high performance field effect transistor housed in a ceramic micro-x package with TC1201 PHEMT Chip.

Features

! ! ! ! ! ! ! ! ! ! 0.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz 21.5 dBm Typical Power at 12 GHz 12 dB Typical Linear Power Gain at 12 GHz Breakdown Voltage : BVDGO ≥ 9 V Lg = 0.25 µm, Wg = 300 µm Tight Vp ranges control High RF input power handling capability 100 % DC Tested Micro-X Metal Ceramic Package PHOTO.

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Published: Jul 4, 2013 |