TC2182 Datasheet - Transcom

TC2182 Low Noise Ceramic Packaged PHEMT GaAs FETs

The TC2182 is a high performance field effect transistor housed in a ceramic micro-x package with TC1102 PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure co.

TC2182 Features

* 0.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 13 dB Typical at 12 GHz Lg = 0.25 µm, Wg = 160 µm Tight Vp ranges control High RF input power handling capability 100 % DC Tested Micro-X Metal Ceramic Package PHOT

TC2182 Datasheet (247.10 KB)