.
TRANSCOM
TC3133 - 2.4 GHz 1W MMIC
TC3133 REV2_20031121 2.4 GHz 1W MMIC FEATURES • • • • • P-1 dB: 31 dBm Small Signal Gain: 24 dB Power Added Efficiency: 30 % IP3: 39 dBm Bias Conditi.
TRANSCOM
TC1601 - 2W High Linearity and High Efficiency GaAs Power FETs
TC1601 REV4_20060510 2W High Linearity and High Efficiency GaAs Power FETs FEATURES ! 2W Typical Power at 6 GHz PHOTO ENLARGEMENT ! Linear Power .
TRANSCOM
TC3139 - 2.3 - 2.5 GHz 1W MMIC
TC3139 REV.2_04/12/2004 2.3 - 2.5 GHz 1W MMIC FEATURES • • • • • • P-1 dB: 30 dBm Small Signal Gain: 26 dB Power Added Efficiency: 32 % IP3: 40 dBm M.
TRANSCOM
TC3141 - 2.4 GHz 2W MMIC
TC3141 REV3_20040412 2.4 GHz 2W MMIC FEATURES • P-1 dB: 33 dBm • Small Signal Gain: 29 dB • Power Added Efficiency: 31 % • IP3: 42 dBm • DC Bias: 80.
Transcom
TC3339 - 2.9 - 3.7 GHz 1W MMIC
TC3339 REV.3_04/18/2005 2.9 - 3.7 GHz 1W MMIC FEATURES • • • • • • P-1 dB: 30 dBm Small Signal Gain: 26 dB Power Added Efficiency: 25 % IP3: 39 dBm M.
Transcom
TC2696 - 2 W Flange Ceramic Packaged PHEMT GaAs Power FETs
TRANSCOM TC2696 Preliminary 2 W Flange Ceramic Packaged PHEMT GaAs Power FETs FEATURES • • • • • • • • • 2 W Typical Output Power at 2.45 GHz 14 dB Ty.
Transcom
TC2571 - PHEMT GaAs Power FETs
www.DataSheet4U.com TC2571 REV.2_04/12/2004 1W Low-Cost Packaged PHEMT GaAs Power FETs FEATURES • • • • • • • • • 1W Typical Output Power at 6 GHz 1.
Transcom
TC1101 - Low Noise and Medium Power GaAs FETs
TRANSCOM TC1101 January 2002 Low Noise and Medium Power GaAs FETs FEATURES • • • • • • • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associa.
Transcom
TC1102 - Super Low Noise GaAs FETs
TRANSCOM TC1102 January 2002 Super Low Noise GaAs FETs FEATURES • • • • • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associated Gain: Ga = .
Transcom
TC1301 - Low Noise and Medium Power GaAs FETs
TC1301 REV.2_04/12/2004 Low Noise and Medium Power GaAs FETs FEATURES Low Noise Figure: NF = 0.8 dB Typical at 12 GHz www.DataSheet4U.com • High Asso.
Transcom
TC2996D - 2.45 GHz 12 W Flange Ceramic Packaged GaAs Power FETs
www.DataSheet4U.com TC2996D REV2_20070503 2.45 GHz 12 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 12 W Typical Power at 2.45 GHz • 11 dB Ty.
Transcom
TC2997D - 2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs
www.DataSheet4U.com TC2997D REV3_20050418 2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 20W Typical Power at 2.45 GHz • 10dB Typ.
Transcom
TC2591 - 1 W Flange Ceramic Packaged PHEMT GaAs Power FETs
TC2591 REV4_20070507 1 W Flange Ceramic Packaged PHEMT GaAs Power FETs FEATURES • • • • • • • • • • 1 W Typical Output Power at 6 GHz 12 dB Typical .
Transcom
TC2181 - Low Noise and High Dynamic Range Packaged GaAs FETs
www.DataSheet4U.com TC2181 REV4_20070504 Low Noise and High Dynamic Range Packaged GaAs FETs FEATURES ! ! ! ! ! ! ! ! ! ! 0.5 dB Typical Noise Figur.
Transcom
TC2182 - Low Noise Ceramic Packaged PHEMT GaAs FETs
www.DataSheet4U.com TC2182 REV4_20070504 Low Noise Ceramic Packaged PHEMT GaAs FETs FEATURES • • • • • • • 0.5 dB Typical Noise Figure at 12 GHz Hig.
TRANSCOM
TC2896 - 5 W Flange Ceramic Packaged GaAs Power FETs
TC2896 REV4_20070507 5 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 5 W Typical Power at 6 GHz • 8 dB Typical Linear Power Gain at 6 GHz • Hi.
TRANSCOM
TC3131 - 2.4 GHz 1W MMIC
TC3131 REV2_20040412 2.4 GHz 1W MMIC FEATURES • • • • • P-1 dB: 30 dBm Small Signal Gain: 28 dB Power Added Efficiency: 32 % IP3: 39 dBm Bias Conditi.
Transcom
TC2996A - GaAs Power FETs
www.DataSheet4U.net TC2996A REV1_20070503 1.6 GHz 12 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 12 W Typical Power at 1.6 GHz • 13 dB Typ.
Transcom
TC2996B - GaAs Power FETs
www.DataSheet4U.net TC2996B REV1_20070503 1.9 GHz 12 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 12 W Typical Power at 1.9 GHz • 13 dB Typi.
Transcom
TC2997A - GaAs Power FETs
www.DataSheet4U.net TC2997A PRE4_20050708 Preliminary 1.6 GHz 20 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 20 W Typical Power at 1.6 GH.
