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TC2591 - 1 W Flange Ceramic Packaged PHEMT GaAs Power FETs

General Description

The TC2591 is packaged with the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip.

The flange ceramic package provides the best thermal conductivity for the GaAs FET.

All devices are 100% DC and RF tested to assure consistent quality.

Key Features

  • 1 W Typical Output Power at 6 GHz 12 dB Typical Linear Power Gain at 6 GHz High Linearity: IP3 = 40 dBm Typical at 6 GHz High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz Suitable for High Reliability.

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Datasheet Details

Part number TC2591
Manufacturer Transcom
File Size 105.00 KB
Description 1 W Flange Ceramic Packaged PHEMT GaAs Power FETs
Datasheet download datasheet TC2591 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TC2591 REV4_20070507 1 W Flange Ceramic Packaged PHEMT GaAs Power FETs FEATURES • • • • • • • • • • 1 W Typical Output Power at 6 GHz 12 dB Typical Linear Power Gain at 6 GHz High Linearity: IP3 = 40 dBm Typical at 6 GHz High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz Suitable for High Reliability Application Breakdown Voltage: BVDGO ≥ 15 V Lg = 0.35 µm, Wg = 2.4 mm Tight Vp ranges control High RF input power handling capability 100 % DC Tested Flange Ceramic Package PHOTO ENLARGEMENT • DESCRIPTION The TC2591 is packaged with the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality.