Transcom TC2591
The TC2591 is packaged with the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET.| Part No. | TC2591 |
|---|---|
| Datasheet | TC2591 Download |
| Manufacturer |  Transcom |
| Description | 1 W Flange Ceramic Packaged PHEMT GaAs Power FETs |
| Buy | Stock & Price |
FEATURES
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● 1 W Typical Output Power at 6 GHz 12 dB Typical Linear Power Gain at 6 GHz High Linearity: IP3 = 40 dBm Typical at 6 GHz High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz Suitable for High Reliability Application Breakdown Voltage: BVDGO ≥ 15 V Lg = 0.35 µm, Wg = 2.4 mm Tight Vp ranges control High RF input power handling capability 100 % DC Tested Flange Ceramic Package PHOTO ENLARGEMENT
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DESCRIPTION
All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for commercial and military high performance power applications.ELECTRICAL SPECIFICATIONS
(TA=25 °C) Symbol P1dB GL IP3 PAE IDSS gm VP BVDGO Rth CONDITIONS Output Power at 1dB Gain Compression Point , f = 6GHz VDS = 8 V, IDS = 240 mA Linear Power Gain, f = 6GHz VDS = 8 V, IDS = 240 mA Intercept Point of the 3rd-order Intermodulation, f = 6GHz VDS = 8 V, IDS = 240 mA, *PSCL = 17 dBm Power Added Efficiency at 1dB Compress...
