• Part: TC2591
  • Description: 1 W Flange Ceramic Packaged PHEMT GaAs Power FETs
  • Manufacturer: Transcom
  • Size: 105.00 KB
Download TC2591 Datasheet PDF
Transcom
TC2591
TC2591 is 1 W Flange Ceramic Packaged PHEMT GaAs Power FETs manufactured by Transcom.
REV4_20070507 1 W Flange Ceramic Packaged PHEMT GaAs Power FETs Features - - - - - - - - - - 1 W Typical Output Power at 6 GHz 12 dB Typical Linear Power Gain at 6 GHz High Linearity: IP3 = 40 dBm Typical at 6 GHz High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz Suitable for High Reliability Application Breakdown Voltage: BVDGO ≥ 15 V Lg = 0.35 µm, Wg = 2.4 mm Tight Vp ranges control High RF input power handling capability 100 % DC Tested Flange Ceramic Package PHOTO ENLARGEMENT - DESCRIPTION The TC2591 is packaged with the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. The flange ceramic package provides the best thermal conductivity for the GaAs...