FEATURES
! ! ! ! ! ! ! ! ! ! 0.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz 18.5 dBm Typical Power at 12 GHz 13 dB Typical Linear Power Gain at 12 GHz Breakdown Voltage : BVDGO ≥ 9V Lg = 0.25 µm, Wg = 160 µm Tight Vp ranges control High RF input power handling capability 100 % DC Tested Micro-X Metal Ceramic Package PHOTO ENLARGEMENT DESCRIPTION
All devices are 100 % DC tested to assure consistent quality. ELECTRICAL SPECIFICATIONS
(TA=25 °C) Symbol NF Ga P1dB GL IDSS gm VP Rth CONDITIONS Noise Figure at VDS = 2 V, IDS = 10 mA, f = 12GHz = 12GHz = 12 GHz VDS = 6 V, IDS = 25 mA 10 17.5 11 Associated Gain at VDS = 2 V, IDS = 10 mA, f Linear Power Gain, f MIN TYP 0.5 12 18.5 13 48 55 -1.0* 9 12 250 MAX 0.7 UNIT dB dB dBm dB mA mS Volts Volts °C/W Output Power at 1dB Gain Compression Point, f = 12GHz VDS = 6 V, IDS = 25 mA Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V,...
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