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TC2181 - Low Noise and High Dynamic Range Packaged GaAs FETs

Datasheet Summary

Description

The TC2181 is a high performance field effect transistor housed in a ceramic micro-x package with TC1101 PHEMT Chip.

It has very low noise figure, high associated gain and high dynamic range that makes this device suitable for use in low noise amplifiers.

Features

  • ! ! ! ! ! ! ! ! ! ! 0.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz 18.5 dBm Typical Power at 12 GHz 13 dB Typical Linear Power Gain at 12 GHz Breakdown Voltage : BVDGO ≥ 9V Lg = 0.25 µm, Wg = 160 µm Tight Vp ranges control High RF input power handling capability 100 % DC Tested Micro-X Metal Ceramic Package PHOTO.

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Datasheet preview – TC2181

Datasheet Details

Part number TC2181
Manufacturer Transcom
File Size 305.68 KB
Description Low Noise and High Dynamic Range Packaged GaAs FETs
Datasheet download datasheet TC2181 Datasheet
Additional preview pages of the TC2181 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com TC2181 REV4_20070504 Low Noise and High Dynamic Range Packaged GaAs FETs FEATURES ! ! ! ! ! ! ! ! ! ! 0.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz 18.5 dBm Typical Power at 12 GHz 13 dB Typical Linear Power Gain at 12 GHz Breakdown Voltage : BVDGO ≥ 9V Lg = 0.25 µm, Wg = 160 µm Tight Vp ranges control High RF input power handling capability 100 % DC Tested Micro-X Metal Ceramic Package PHOTO ENLARGEMENT DESCRIPTION The TC2181 is a high performance field effect transistor housed in a ceramic micro-x package with TC1101 PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device suitable for use in low noise amplifiers.
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