TC2201 Datasheet - Transcom

TC2201 Plastic Packaged Low Noise PHEMT GaAs FETs

The TC2201 is a high performance field effect transistor housed in a plastic package with TC1201 PHEMT Chip. Its low noise figure makes this device suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent quality. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol NF G.

TC2201 Features

* 1.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 7 dB Typical at 12 GHz 21.5 dBm Typical Power at 12 GHz 8 dB Typical Linear Power Gain at 12 GHz Lg = 0.25 µm, Wg = 300 µm Tight Vp ranges control High RF

TC2201_Transcom.pdf