GAAS Datasheet | Specifications & PDF Download

Matched GaAs SPDT Switch DC - 2 GHz Features q q q SW-331, SW-333 V 2.00 SW-331 (CR-2) Miniature Ceramic Package Fast Switching Speed, 7 ns Typical

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P-N GaAs Infrared-Emitting Diode Optoelectronic Products 4-72 TIL38 General Description The TIL38 is a p-n GaAs infrared-emitting diode in a low-cos

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SW-277 High Power GaAs SPDT Switch DC - 2.0 GHz Features • Positive Supply and Control Voltages • 1 dB Compression Point: +36 dBm Typical, 8 V • 3rd

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SPF5189Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Amplifier SPF5189Z 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description Th

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MITSUBISHI SEMICONDUCTOR PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MGFC4419G I

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NJG1103F1 1.5/1.9GHz LOW NOISE AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1103F1 is a Low Noise Amplifier GaAs MMIC designed for 1.5GHz and 1.9GHz b

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Product Description Sirenza Microdevices’ SBB-5089 is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active

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Preliminary Data Sheet 2.1 FMS2016QFN-1 High Power Reflective GaAs SP4T Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ 3x3x0.9mm Packaged pHEMT Switch NiPdAu finish

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62000 GaAs LIGHT EMITTING DIODE “PILL PACK” (TYPE GS1140) Mii OPTOELECTRONIC PRODUCTS DIVISION Features: • • • • • Hermetically sealed High output,

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www.DataSheet4U.com Product Specification D8740180GT GaAs Power Doubler, 40 – 870MHz, 18.5dB min. Gain @ 870MHz, 375mA max. @ 24VDC FEATURES • • •

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2SK3001 GaAs HEMT Low Noise Amplifier www.DataSheet4U.com ADE-208-597(Z) 1st. Edition December 1997 Features • Excellent low noise characteristics.

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28–32 GHz GaAs MMIC Driver Amplifier AA031P1-00 Features s Single Bias Supply Operation (5 V) s 19 dB Typical Small Signal Gain s 16 dBm Typical P1 dB

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Preliminary GaAs IC 3 Bit Digital Attenuator 4 dB LSB Positive Control 0.75–2 GHz AA100-59 Features s Attenuation in 4 dB Steps to 28 dB with High Ac

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GaAs IC 5 Bit Digital Attenuator 1 dB LSB Positive Control 0.5–2.5 GHz AA101-80 Features I Attenuation 1 dB Steps to 31 dB with High Accuracy I Single

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CGY 121 A GaAs MMIC Preliminary Datasheet l l l l l l l RF-in; -Vg Vcontrol 6 RF-GND 5 4 Variable gain amplifier (MMIC-Amplifier) for mobile communi

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High Power GaAs SPDT Switch DC - 3 GHz Features q SW-106, SW-276 V 2.00 SW-106 (CR-5) q q q q +39 dBm Typ. 1 dB Compression Point, -8V Control +65

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Product Description NGA-586 Sirenza Microdevices’ NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darl

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