NJG1812AMET-A - HIGH POWER DPDT SWITCH GaAs MMIC

Nisshinbo

Datasheet Details

Part number	NJG1812AMET-A
Manufacturer	Nisshinbo
File Size	1.24 MB
Description	HIGH POWER DPDT SWITCH GaAs MMIC
Datasheet	NJG1812AMET-A-Nisshinbo.pdf

The NJG1812AMET-A is a GaAs DPDT switch MMIC suitable for antenna swapping of LTE/UMTS/CDMA/GSM applications.

S.
AEC-Q100 grade 2 qualified.
Low voltage operation VDD = 2.7 V typ.
Logic control voltage VCTL(H) = 1.35 to 5.0 V.
Low insertion loss 0.25 dB typ. @ f = 900 MHz, PIN = +35 dBm 0.35 dB typ. @ f = 1900 MHz, PIN = +33 dBm 0.45 dB typ. @ f = 2700 MHz, PIN = +27 dBm.
Low harmonics 2fo = -89 dBm typ. @ f = 786.5 MHz, PIN = +23 dBm 3fo = -89 dBm typ. @ f = 710 MHz, PIN = +23 dBm.
High power handling P-0.1dB = +36 dBm min.
Package with wettable flank EQFN12-ET (2.0.

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Published: Aug 19, 2025 |