Datasheet4U Logo Datasheet4U.com

FLL300IL-1 - L-band Medium & High Power GAAS Fets

Download the FLL300IL-1 datasheet PDF. This datasheet also covers the FLL300IL variant, as both devices belong to the same l-band medium & high power gaas fets family and are provided as variant models within a single manufacturer datasheet.

General Description

The FLL300IL-1, FLL300IL-2, FLL300IL-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices.

Key Features

  • High Output Power: P1dB = 44.5dBm (Typ. ) High Gain: G1dB = 12.0dB (Typ. )@1.8GHz (FLL300IL-2) High PAE: ηadd = 44% (Typ. ) Proven Reliability Hermetically Sealed Package.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FLL300IL-3FujitsuMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
FLL351ME L-band medium & high power gaas FTEs Fujitsu Media Devices
FLL100 Capacitor FAAM
FLL107ME L-BAND MEDIUM & HIGH POWER GAAS FET Fujitsu
FLL107ME L-BAND MEDIUM & HIGH POWER GAAS FET Eudyna Devices
FLL120MK L-Band Medium & High Power GaAs FET Eudyna Devices

Other Datasheets by Fujitsu Semiconductor Limited

Part Number Description
FLL300IL-2 (FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets
FLL300IL-3 (FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets
FLL300IP-4 L-band Medium & High Power GAAS Fets
FLL357ME L-band Medium & High Power GAAS Fets

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 44.5dBm (Typ.) High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2) High PAE: ηadd = 44% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL300IL-1, FLL300IL-2, FLL300IL-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.