* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
IRFD221
GE
188.34 KB
Field effect power transistor.
~D~~U FIELD EFFECT POWER TRANSISTOR IRFD220,221 D82CN2,M2 0.8 AMPERES 200, 150 VOLTS RDS(ON) = 0.8 il This series of N-Channel Enhancement-mode Powe.
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