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IRFD221 Datasheet, GE

IRFD221 transistor equivalent, field effect power transistor.

IRFD221 Avg. rating / M : 1.0 rating-17

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IRFD221 Datasheet

Features and benefits


* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature

Application

including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating.

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IRFD221 Page 1 IRFD221 Page 2

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