G1007 - MOSFET

Description

The G1007.

combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

power switching application and LED backlighting.

Features

VDSS 100V RDS(ON) @10V (typ) 70mΩ ID 7A.
Ultra Low On-Resistance.
High UIS and UIS 100% Test.

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Datasheet Details

Part number	G1007
Manufacturer	GFD
File Size	1.25 MB
Description	MOSFET
Datasheet	G1007 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GOFORD General Description The G1007. combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for power switching application and LED backlighting. Features VDSS 100V RDS(ON) @10V (typ) 70mΩ ID 7A ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Power switching application ● LED backlighting G1007. Schematic Diagram Marking and pin Assignment Table 1.

Published: Mar 12, 2019 |