G1003A Datasheet | GFD

Description The G1003A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 3A < 120mΩ < 130mΩ l 100% Avalanche Tested l Ro HS pliant l ESD (HBM)>6KV Schematic diagram Application l Power switch l DC/DC converters Ordering Information Device G1003A Package SOT-23-3L Marking G1003A SOT-23-3L Packaging 3000pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Power Dissipation Operating Junction and Storage Temperature Range (note1) VDS ID IDM VGS PD TJ, Tstg ±20 -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient, t≤10s（ SOP-8 SOT系列） Rth JA ºC/W .gofordsemi. TEL：0755-29961263 FAX:0755-29961466(A1465-V1.1) Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol...