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G1003A Datasheet PDF

GFD G1003A

The G1003A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
Part No. G1003A
Datasheet G1003A Download
Manufacturer GFD
Description N-Channel Enhancement Mode Power MOSFET
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G1003A datasheet page 1 preview

DESCRIPTION

It can be used in a wide variety of applications.

GENERAL FEATURES

l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 3A < 120mΩ < 130mΩ l 100% Avalanche Tested l RoHS Compliant l ESD (HBM)>6KV Schematic diagram Application l Power switch l DC/DC converters Ordering Information Device G1003A Package SOT-23-3L Marking G1003A SOT-23-3L Packaging 3000pcs/Reel

ABSOLUTE MAXIMUM RATINGS

TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Power Dissipation Operating Junction and Storage Temperature Range (note1) VDS ID IDM VGS PD TJ, Tstg 100 V 3 A 12 A ±20 V 1.5 W -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient, t≤10s( SOP-8 SOT系列) RthJA 83.3 ºC/W TEL:0755-29961263 FAX:0755-29961466(A1465-V1.1) G1003A Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Static Parameters Dr...
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